Removable temporary protective layers for use in semiconductor manufacturing
AssigneeHoneywell International Inc.
InventorsDesaraju Varaprasad, Ronald R. Katsanes
Life of this patent
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Abstract
A method for temporarily protecting a semiconductor device wafer during processing includes preparing a solution including poly(vinyl alcohol) and water, coating the device wafer with the prepared solution, baking the coated device wafer to form a protective layer, processing the baked device wafer, and dissolving the protective layer from the processed wafer with a solvent at a temperature not less than 65° C. The solvent includes water. The baking is at a temperature from 150° C. to 170° C. The protective layer remains on the baked device wafer during processing. The poly(vinyl alcohol) has a degree of hydrolysis greater than or equal to 93%.
Claims19
A method for temporarily protecting a semiconductor device wafer during processing, the method including:
- preparing a solution including a poly(vinyl alcohol) and water, the poly(vinyl alcohol) having a degree of hydrolysis greater than or equal to 93%;
- coating the device wafer with the prepared solution;
- baking the coated device wafer at a temperature from 150° C. to 170° C. to form a protective layer;
- dicing the baked device wafer with a dicing blade while spraying the device wafer and dicing blade with water, the protective layer remaining on the baked device wafer during dicing;
- and
- dissolving the protective layer from the processed wafer with a solvent at a temperature not less than 65° C., the solvent including water.
A method for temporarily protecting a semiconductor device wafer during wafer singulation, the method including:
- preparing a solution including a poly(vinyl alcohol) and water, the poly(vinyl alcohol) having a degree of hydrolysis greater than or equal to 98.4%;
- coating the device wafer with the prepared solution;
- baking the coated device wafer at a temperature from 135° C. to 170° C. to form a protective layer;
- dicing the baked device wafer with a dicing blade while spraying the device wafer and dicing blade with water, the protective layer remaining on the baked device wafer during dicing;
- and
- dissolving the protective layer from the diced wafer with a solvent at a temperature not less than 65° C. to dissolve the protective layer, the solvent including water.
Dependencies are inferred from the claim text.