Focus ring and method for producing focus ring
AssigneeSumitomo Osaka Cement Co., Ltd.
InventorHiroaki Nagatomo
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Abstract
The present invention provides a focus ring having favorable plasma resistance. In addition, the present invention provides a method for producing a focus ring which enables the easy production of focus rings having favorable plasma resistance. The focus ring of the present invention is a focus ring made of a sintered body of silicon carbide, in which the sintered body includes a plurality of first crystal grains having an α-SiC-type crystal structure and a plurality of second crystal grains having a β-SiC-type crystal structure, a content of the first crystal grains is 70% by volume or more of a total of the first crystal grains and the second crystal grains, and a volume-average crystallite diameter of the first crystal grains is 10 μm or less.
Claims10
A focus ring comprising:
- a sintered body of silicon carbide, the sintered body including a plurality of first crystal grains having an α-SiC-type crystal structure and a plurality of second crystal grains having a β-SiC-type crystal structure, in which
- a content of the first crystal grains is 70% by volume or more of a total of the first crystal grains and the second crystal grains, and
- a volume-average crystallite diameter of the first crystal grains is 10 μm or less.
A method for producing a focus ring, the method comprising:
- mixing first particles which have an α-SiC-type crystal structure and an average particle diameter of 5 μm or less and second particles which have a β-SiC-type crystal structure and an average particle diameter of 0.1 μm or less so that a content of the first particles reaches 70% by volume or more of a total of the first particles and the second particles;
- and
- sintering a mixture including mixed particles of the first particles and the second particles using a hot press,
- wherein, in the sintering, the mixture is heated and pressurized at 2,200° C. or higher and 2,500° C. or lower and 20 MPa or more and 50 MPa or less, and a heating temperature-rise rate from 1,400° C. to 2,000° C. is 10° C./minute or more and 30° C./minute or less.
Dependencies are inferred from the claim text.