Semiconductor device with nanostructures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.
Claims20
A semiconductor device, comprising:
- a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region for absorbing incident light;
- and
- a plurality of nanostructures directly on the photo sensing region and arranged in a hexagonal arrangement, an octagonal arrangement, a triangular arrangement, or combinations thereof.
A device, comprising:
- a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region;
- a plurality of nanostructures directly on the photo sensing region, wherein the nanostructures are arranged in a polygonal arrangement;
- a dielectric layer over the nanostructures;
- a light filter layer over the dielectric layer;
- and
- a microlens layer over the dielectric layer.
A device, comprising:
- a substrate having a plurality of sensing pixels, each of the sensing pixels having a photo sensing region;
- a plurality of nanostructures over the photo sensing region, wherein the nanostructures are in contact with each other, wherein at least one of the nanostructures has a projected portion on an upper surface of the substrate and a circle equivalent diameter of the projected portion is about (4A/π)1/2, where A is an area of the projected portion;
- and
- a light filter layer over the nanostructures.
Dependencies are inferred from the claim text.