Semiconductor film with adhesion layer and method for forming the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a gate dielectric layer over a semiconductor substrate using an oxygen-terminating gas flowing at a first flow rate, the first flow rate being greater than zero, the gate dielectric layer comprising a semiconductor oxide, the semiconductor oxide comprising a compound of a semiconductor element and oxygen;
• forming a dummy gate layer over the gate dielectric layer using the oxygen-terminating gas flowing at a second flow rate, the second flow rate different than the first flow rate, the second flow rate being maintained at a constant rate greater than zero, wherein bonds between the dummy gate layer and the gate dielectric layer are substantially free of nitrogen;
• removing the dummy gate layer;
• and
• after removing the dummy gate layer, forming a gate electrode over the gate dielectric layer.