Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds

A metal-organic chemical vapor deposition process for introducing

• a 13/15 semiconductor layer, comprising
• exposing a surface, under conditions suitable for deposition, to at least one binary group 15 element compound as the educt, as to form a 13/15 semiconductor layer on the surface,
• wherein the at least one binary group 15 element compound has the general formula
• R1R2E-E′R3R4 (I),
• wherein
• R1, R2, R3 and R4 are selected independently from one another from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and
• E and E′ are selected independently from one another from the group consisting of N, P, As, Sb and Bi,
• wherein E=E′ or E≠E′, and
• wherein hydrazine and its derivatives are excluded from the usage indicated, and/or
• wherein at least one binary group 15 element compound has the general formula
• R5E(E′R6R7)2 (II),
• wherein
• R5, R6 and R7 are selected independently from one another from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and
• E and E′ are selected independently from one another from the group consisting of N, P, As, Sb and Bi,
• wherein E=E′ or E≠E′.