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US 10,263,596 B2Granted
Temperature-engineered MEMS resonator
AssigneeSiTime Corporation
InventorsJoseph C. Doll, Paul M. Hagelin, Ginel C. Hill, Nicholas Miller, Charles I. Grosjean
Life of this patent
Estimating the term…
Abstract
Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
Claims21
A microelectromechanical system (MEMS) die comprising:
- a field area;
- a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer;
- and
- a tethering structure to physically secure the resonant structure to the field area, the tethering structure having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the resonant structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the resonant structure.
1 more element
A method of fabricating a microelectromechanical system (MEMS) die comprising:
- a field area;
- forming a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer;
- and
- forming a tethering structure to physically secure the resonant structure to a field area of the MEMS die, including forming a tethering structure having (i) a layer of degenerately-doped polycrystalline silicon coupled to the degenerately-doped polycrystalline silicon layer of the resonant structure and (ii) a layer of degenerately-doped single-crystal silicon coupled to the degenerately-doped single-crystal silicon layer of the resonant structure.
1 more element
A microelectromechanical system (MEMS) die comprising:
- a field area;
- a resonant structure having a layer of degenerately-doped polycrystalline silicon, a layer of degenerately-doped single-crystal silicon and a layer of piezoelectric material sandwiched between the degenerately-doped polycrystalline silicon layer and the degenerately-doped single-crystal silicon layer;
- and
- means for physically securing the resonant structure to the field area.
1 more element
Dependencies are inferred from the claim text.