Device and method for producing silicon carbide

Device for continuously producing crystalline silicon carbide, comprising:

• a reactor;
• and
• a collection container at least partially spatially separated from the reactor, wherein
• the reactor comprises a supply means for supplying a precursor mixture,
• a substrate for depositing crystalline silicon carbide is provided,
• a reaction chamber of the reactor can be tempered to a first temperature T1 and the substrate can be tempered to a second temperature T2 which is different from the first temperature T1, wherein the reactor can be heated to a temperature in a range of ≥1400° C. to ≤2000° C., and wherein the temperature of the substrate can be reduced by a temperature in a range of ≥50° C. to ≤100° C. compared to the temperature basically set in the reactor within the aforementioned range of ≥1400° C. to ≤2000° C., wherein a first tempering means for tempering the reactor is provided and further a second tempering means for tempering the substrate is provided, wherein the first tempering means for tempering the reactor and the second tempering means for tempering the substrate are controllable separately from each other, wherein the second tempering means includes a heating element for heating the substrate, wherein
• the substrate for the deposition of crystalline silicon carbide can be disposed at a deposition position within or adjacent to the reaction chamber and at least area-wise be moved from the deposition position to the collection container, and wherein
• a scraper is arranged such that after or during an at least area-wise movement of the substrate to the collection container crystalline silicon carbide deposited on the substrate can be removed by the scraper from the substrate and the removed crystalline silicon carbide can be transferred into the collection container.