Back to results
US 10,257,454 B2Granted
Solid-state imaging device, method of driving solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorKyosuke Ito
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes: a semiconductor layer having a first surface and a second surface that oppose each other; and a plurality of photodiodes stacked in the semiconductor layer. One or more photodiodes of the plurality of photodiodes also serve as a transfer path of a signal charge accumulated in other photodiodes.
Claims19
A solid-state imaging device, comprising:
- a semiconductor layer comprising a first surface side and a second surface side,
- wherein the second surface side is opposite to the first surface side;
- a color filter on the first surface side of the semiconductor layer;
- and
- a plurality of photodiodes stacked in the semiconductor layer,
- wherein a first photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, first light of a first wavelength;
- photoelectrically convert the first light of the first wavelength;
- and
- accumulate a first signal charge,
- wherein a second photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, second light of a second wavelength;
- photoelectrically convert the second light of the second wavelength,
- wherein the first wavelength and the second wavelength are same;
- accumulate a second signal charge;
- and
- serve as a transfer path of the first signal charge,
- wherein a third photodiode of the plurality of photodiodes is on the second surface side, and
- wherein the third photodiode is configured to transfer the first signal charge and the second signal charge to a floating diffusion.
16 more elements
A method of driving a solid-state imaging device, comprising:
- photoelectrically converting first light of a first wavelength by a first photodiode of a plurality of photodiodes;
- transferring, a first signal charge of the first photodiode of the plurality of photodiodes to a second photodiode of the plurality of photodiodes,
- wherein the plurality of photodiodes are stacked in a semiconductor layer, and the semiconductor layer comprises a first surface side and a second surface side, and
- wherein the second surface side is opposite to the first surface side;
- photoelectrically converting second light of a second wavelength by the second photodiode,
- wherein the first wavelength and the second wavelength are same;
- and
- transferring, a second signal charge of the second photodiode and the first signal charge, via a third photodiode of the plurality of photodiodes to a floating diffusion,
- wherein the third photodiode is on the second surface side,
- wherein among the plurality of photodiodes, the third photodiode is closest to the second surface side of the semiconductor layer.
7 more elements
A method of manufacturing a solid-state imaging device, comprising:
- forming a semiconductor layer that comprises a first surface side and a second surface side,
- wherein the second surface side is opposite to the first surface side;
- forming a color filter on the first surface side of the semiconductor layer;
- and
- forming a plurality of photodiodes that are stacked on the semiconductor layer,
- wherein a first photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, first light of a first wavelength;
- photoelectrically convert the first light of the first wavelength;
- and
- accumulate a first signal charge,
- wherein a second photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, second light of a second wavelength;
- photoelectrically convert the second light of the second wavelength,
- wherein the first wavelength and the second wavelength are same;
- accumulate a second signal charge;
- and
- serve as a transfer path of the first signal charge,
- wherein a third photodiode of the plurality of photodiodes is on the second surface side, and
- wherein the third photodiode is configured to transfer the first signal charge and the second signal charge to a floating diffusion.
16 more elements
An electronic apparatus, comprising:
- a solid-state imaging device comprising:
- a semiconductor layer comprising a first surface side and a second surface side,
- wherein the second surface side is opposite to the first surface side;
- a color filter on the first surface side of the semiconductor layer;
- and
- a plurality of photodiodes stacked in the semiconductor layer,
- wherein a first photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, first light of a first wavelength;
- photoelectrically convert the first light of the first wavelength;
- and
- accumulate a first signal charge,
- wherein a second photodiode of the plurality of photodiodes is configured to:
- receive, via the color filter, second light of a second wavelength;
- photoelectrically convert the second light of the second wavelength,
- wherein the first wavelength and the second wavelength are same;
- accumulate a second signal charge;
- and
- serve as a transfer path of the first signal charge,
- wherein a third photodiode of the plurality of photodiodes is on the second surface side, and
- wherein the third photodiode is configured to transfer the first signal charge and the second signal charge to a floating diffusion.
17 more elements
A solid-state imaging device, comprising:
- a semiconductor layer comprising a first surface side and a second surface side, wherein the second surface side is opposite to the first surface side;
- a plurality of photodiodes stacked in the semiconductor layer,
- wherein a first photodiode of the plurality of photodiodes is configured to accumulate a first signal charge,
- wherein a second photodiode of the plurality of photodiodes is configured to:
- accumulate a second signal charge;
- and
- serve as a transfer path of the first signal charge,
- wherein a third photodiode of the plurality of photodiodes is on the second surface side, and
- wherein the third photodiode is configured to transfer the first signal charge and the second signal charge to a floating diffusion;
- and
- a light-shielding film configured to shield light that enters the third photodiode,
- wherein among the plurality of photodiodes, the third photodiode is closest to the second surface side.
9 more elements
A solid-state imaging device, comprising:
- a semiconductor layer comprising a first surface side and a second surface side, wherein the second surface side is opposite to the first surface side;
- a plurality of photodiodes stacked in the semiconductor layer,
- wherein a first photodiode of the plurality of photodiodes is configured to accumulate a first signal charge corresponding to a blue light signal,
- wherein a second photodiode of the plurality of photodiodes is configured to:
- accumulate a second signal charge corresponding to a green light signal;
- and
- serve as a transfer path of the first signal charge,
- wherein a third photodiode of the plurality of photodiodes is on the second surface side,
- wherein the third photodiode is configured to:
- transfer the first signal charge and the second signal charge to a floating diffusion;
- and
- obtain a third signal charge corresponding to a red light signal,
- wherein a fourth photodiode of the plurality of photodiodes is configured to:
- obtain a fourth signal charge corresponding to an infrared light signal;
- and
- photoelectrically convert infrared light, and
- wherein the fourth photodiode is closer to the second surface side than the third photodiode.
14 more elements
Dependencies are inferred from the claim text.