Method and system for monolithic integration of photonics and electronics in CMOS processes

A system for semiconductor processing, the system comprising:

• an optoelectronics transceiver comprising photonic and electronic devices that are fabricated in two complementary metal-oxide semiconductor (CMOS) die having different silicon layer thicknesses for said photonic and said electronic devices, wherein said CMOS die are bonded together by metal contacts, and wherein a first of said CMOS die comprises said photonic devices and a second of said CMOS die comprises said electronic devices, and wherein said optoelectronics transceiver is operable to:
• receive a continuous wave optical signal as a source signal via a grating coupler in said first of said CMOS die;
• generate first modulated optical signals in said first CMOS die using said received continuous wave optical signal;
• receive second modulated optical signals in said first CMOS die;
• generate electrical signals from said received modulated signals in said first CMOS die;
• and
• communicate said electrical signals from said first CMOS die to said second CMOS die utilizing through-silicon vias that extend from a first surface of said first CMOS die on which said photonic devices are located to a second surface opposite to said first surface of said first CMOS die.

A system for semiconductor processing, the system comprising:

• an optoelectronics transceiver comprising photonic and electronic devices that are fabricated in two complementary metal-oxide semiconductor (CMOS) die having different silicon layer thicknesses for said photonic and said electronic devices wherein said die are bonded together by metal contacts that comprise back-end metals from a CMOS process, wherein a first of said CMOS die comprises said photonic devices and a second of said CMOS die comprises said electronic devices, and wherein said optoelectronics transceiver is operable to:
• receive a continuous wave optical signal as a source signal via a grating coupler in said first of said CMOS die;
• generate first modulated optical signals in said first CMOS die using said received continuous wave optical signal based on a first electrical signal received from said second CMOS die;
• receive second modulated optical signals in said first CMOS die;
• generate second electrical signals from said second modulated signals in said first CMOS die;
• and
• communicate electrical signals from said first CMOS die utilizing through-silicon vias that extend from a first surface of said first CMOS die on which said photonic devices are located to a second surface opposite to said first surface of said first CMOS die.