Monolithic integration of antenna switch and diplexer
AssigneeQUALCOMM Incorporated
InventorsShiqun Gu, Chengjie Zuo, Steve Fanelli, Thomas Gee, Young Kyu Song
Life of this patent
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Abstract
An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.
Claims20
An integrated radio frequency (RF) circuit structure, comprising:
- a resistive substrate material;
- an RF antenna switch in a silicon on insulator (SOI) layer supported by the resistive substrate material;
- a buried oxide (BOX) layer directly coupled to the SOI layer;
- and
- a filter, comprising inductors and capacitors, arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material, in which the RF antenna switch is directly on a first surface of the BOX layer facing the resistive substrate material, and the filter is directly on a second surface opposite the first surface of the BOX layer and distal from the SOI layer directly supporting the first surface of the BOX layer.
An integrated radio frequency (RF) circuit structure, comprising:
- a resistive substrate material;
- means for switching an RF antenna arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material;
- a buried oxide (BOX) layer directly coupled to the SOI layer;
- and
- a filter, comprising inductors and capacitors, arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material, in which the RF antenna switching means is directly on a first surface of the BOX layer facing the resistive substrate material, and the filter is directly on a second surface opposite the first surface of the BOX layer and distal from the SOI layer directly supporting the first surface of the BOX layer.
A radio frequency (RF) front end module, comprising:
- an integrated radio frequency (RF) circuit structure, comprising an RF antenna switch in a silicon on insulator (SOI) layer supported by a resistive substrate material, a buried oxide (BOX) layer coupled to the SOI layer, and a filter, comprising inductors and capacitors, arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material, in which the RF antenna switch is directly on a first surface of the BOX layer facing the resistive substrate material, and the filter is directly on a second surface opposite the first surface of the BOX layer and distal from the SOI layer directly supporting the first surface of the BOX layer;
- and
- an antenna coupled to an output of the RF antenna switch.
Dependencies are inferred from the claim text.