Surface light-emitting laser
AssigneeSony Corporation
InventorsShoichiro Izumi, Tatsushi Hamaguchi, Noriyuki Futagawa, Masaru Kuramoto
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Abstract
A surface-emitting laser according to one embodiment of the technology includes a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer of the second conductivity type, and a light output surface in this order. The laser element section further includes an electrode that injects a current into the active layer.
Claims14
A surface-emitting laser comprising:
- a laser element section that includes a first multi-layer film reflecting mirror, a first semiconductor layer having a first conductivity type, an active layer, a second semiconductor layer having a second conductivity type, a second multi-layer film reflecting mirror, a nitride semiconductor layer having the second conductivity type, and a light output surface in this order, the laser element section further including a first electrode that injects a current into the active layer,
- wherein the first semiconductor layer includes AlGaN, InGaN or AlInGaN, and wherein the first semiconductor layer is provided between the electrode and the active layer, and wherein a first surface of the first semiconductor layer directly contacts with the active layer and at least a portion of a second surface of the first semiconductor layer directly contacts with the first electrode.
Dependencies are inferred from the claim text.