Electrically pumped photonic crystal nanolaser

A nanolaser with semiconductors,

• a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers of said rib successively comprises:
• the lower layer of indium gallium arsenide phosphide, InGaAsP, P-type doped, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions, doped by zinc atoms at 1018 atoms/cm3;
• a first intrinsic InGaAsP layer, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions;
• the central layers formed by layers of a first composition of InGaAsP separated by InGaAsP layers of a second composition, such that the InGaAsP layers of the first composition form the quantum wells;
• a second intrinsic InGaAsP layer, having gallium forming from 0 to 40% of its cations and phosphorus forming from 0 to 60% of its anions;
• and
• the upper layer of indium phosphide N-type doped with silicon atoms at 1018 atoms/cm3;
• wherein said lower layer comprises first extensions which extend laterally on either side of the rib and which are coated with first metallizations that are spaced apart from the central layers of the rib;
• and
• wherein said upper layer comprises second extensions which extend longitudinally beyond either end of said rib and which are coated with second metallizations.

A nanolaser with semiconductors,

• a rib having a stack of layers which include central layers forming an assembly of quantum wells arranged between a lower layer of a first conductivity type and an upper layer of a second conductivity type, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers in the rib successively comprises:
• the lower layer of indium gallium arsenide phosphide, InGaAsP, P-type doped, having a thickness in a range from 50 to 250 nm;
• a first intrinsic InGaAsP layer having a thickness in the range from 15 to 100 nm;
• the central layer comprise InGaAsP layers of a first composition separated by InGaAsP layers of a second composition, the layers of the first composition having a thickness in the range from 4 to 12 nm and the layers of the second composition having thicknesses in a range from 10 to 50 nm;
• a second intrinsic InGaAsP layer having a thickness in a range from 15 to 100 nm;
• and
• the upper layer of N-type doped indium phosphide having a thickness in the range from 50 to 250 nm;
• wherein said lower layer comprises first extensions which extend laterally on either side of the rib and which are coated with first metallizations that are spaced apart from the central layers of the rib;
• and
• wherein said upper layer comprises second extensions which extend longitudinally beyond either end of said rib and which are coated with second metallizations.

A nanolaser with semiconductors,

• a rib having a stack of layers, said rib including a plurality of holes pierced through a thickness of the rib, wherein the stack of layers of said rib successively comprises:
• a lower layer of indium gallium arsenide phosphide (InGaAsP), P-type doped;
• a first intrinsic InGaAsP layer;
• a plurality of central layers forming an assembly of quantum wells;
• a second intrinsic InGaAsP layer;
• and
• an upper layer of indium phosphide (InP), N-type doped;
• wherein said lower layer comprises a first extension which extends laterally from a side of the rib and which is coated with a first metallization;
• and
• wherein said upper layer comprises a second extension which extends longitudinally beyond an end of said rib and which is coated with a second metallization.