Organic photoelectronic device and image sensor

An organic photoelectronic device, comprising

• a first electrode and a second electrode, and
• an active layer between the first electrode and the second electrode,
• wherein the active layer comprises a p-type semiconductor compound represented by Chemical Formula 1, and
• an n-type semiconductor compound having a maximum absorption peak in a wavelength region of about 500 nm to about 600 nm and represented by Chemical Formula 2:
• wherein
• R1 and R2 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group having electron donating characteristics, or a combination thereof,
• R3 and R4 are independently a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group having electron donating characteristics, or a combination thereof, and
• R5 to R12 are independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C30 alkoxy group, a halogen atom, a halogen-containing group, or a combination thereof,
• wherein
• Ra to R1 are independently hydrogen, a substituted or unsubstituted C1 to C30alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen atom, a halogen-containing group, or a combination thereof, and
• X is an anion;
• wherein the active layer comprises an intrinsic layer including the p-type semiconductor compound and the n-type semiconductor compound in a thickness ratio of about 1:10 to about 10:1.