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US 10,256,405 B2Granted
Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elements
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Matthew Warren Copel, James Bowler Hannon, Satoshi Oida
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Abstract
A method of forming semiconductor elements in an artificial neural network, the method including forming a substrate including an oxide layer, forming a Silicon layer on the oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.
Claims20
A method of forming semiconductor elements in an artificial neural network, the method comprising:
- forming a substrate comprising an oxide layer;
- forming a Silicon layer on the oxide layer;
- depositing a thin film dopant layer on the Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer to form the semiconductor elements in the artificial neural network.
2 more elements
A method of forming resistive elements, the method comprising:
- forming a plurality of resistive elements in an array, each of the resistive element formed by a method comprising:
- forming a Silicon layer on an oxide layer;
- depositing a thin film dopant layer on a Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer to form the resistive elements in an artificial neural network.
2 more elements
A method of forming a resistive element, the method comprising:
- forming an oxide layer;
- forming a Silicon layer on the oxide layer;
- depositing a thin film dopant layer on the Silicon layer;
- and
- controlling a concentration of the dopant in the thin film dopant layer to form the resistive element in an artificial neural network.
2 more elements
Dependencies are inferred from the claim text.