Insulator material for use in RRAM
AssigneeImec
InventorsChristoph Adelmann, Malgorzata Jurczak
Life of this patent
Estimating the term…
Abstract
The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500° C., said depositing step comprising: at least one HfX4 pulse, and at least one trimethyl-aluminum (TMA) pulse, wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl.
Claims14
A material comprising elements Hf, Al and O, wherein
- Hf represents from 17 to 23 at % of elements Hf, Al, C, O and X as measured by x-ray photoelectron spectroscopy (XPS);
- Al represents from 16 to 23 at % of elements Hf, Al, C, O and X as measured by XPS;
- C represents from 0 to 3 at % of elements Hf, Al, C, O and X as measured by XPS;
- O represents from 57 to 62 at % of elements Hf, Al, C, O and X as measured by XPS;
- and
- X represents from 0 to 1 at % of elements Hf, Al, C, O and X as measured by XPS, wherein X is a halogen selected from Cl, Br, I and F;
- wherein elements Hf, Al, C, O and X make up at least 90% of the at % composition of the material exclusive of hydrogen content as determined by XPS.
A material comprising elements Hf, Al and C, wherein
- Hf represents from 34 to 40 at % of elements Hf, Al, C, O and X as measured by x-ray photoelectron spectroscopy (XPS),
- Al represents from 9 to 14 at % of elements Hf, Al, C, O and X as measured by XPS;
- C represents from 36 to 45 at % of elements Hf, Al, C, O and X as measured by XPS;
- O represents from 0 to 6 at % of elements Hf, Al, C, O and X as measured by XPS;
- and
- X represents from 2 to 6 at % of elements Hf, Al, C, O and X as measured by XPS, wherein X is a halogen selected from Cl, Br, I and F,
- wherein elements Hf, Al, C, O and X make up at least 90% of the at % composition of the material exclusive of hydrogen content as determined by XPS.
Dependencies are inferred from the claim text.