Memory device with multiple interconnect lines

A memory device, comprising:

• a first interconnect including a first region and a second region, the first region extending in a first direction and including a first metallic element, the second region extending in the first direction and including the first metallic element and nitrogen, a second direction from the first region toward the second region crossing the first direction, the first region including a third region, a fourth region, and a fifth region, a direction from the third region toward the fourth region being along the first direction, the fifth region being positioned between the third region and the fourth region, the second region including a sixth region, a seventh region, and a an eighth region, the eighth region being positioned between the sixth region and the seventh region;
• a plurality of second interconnects extending in a third direction crossing a plane including the first direction and the second direction, the sixth region being positioned between one of the second interconnects and the third region, the seventh region being positioned between another one of the second interconnects and the fourth region;
• a first layer provided between the one of the second interconnects and the sixth region and between the other one of the second interconnects and the seventh region, the first layer including a first oxide including at least one element selected from the group consisting of hafnium (Hf), zirconium (Zr), nickel (Ni), tantalum (Ta), tungsten (W), cobalt (Co), aluminum (Al), iron (Fe), manganese (Mn), chrome (Cr), vanadium (V), titanium (Ti), and niobium (Nb);
• and
• a second layer provided between the first layer and the one of the second interconnects and between the first layer and the other one of the second interconnects, the second layer including at least one of silicon or a second oxide, the silicon being monocrystalline, polycrystalline, or amorphous, the second oxide including at least one element selected from the group consisting of hafnium (Hf), zirconium (Zr), nickel (Ni), tantalum (Ta), tungsten (W), cobalt (Co), aluminum (Al), iron (Fe), manganese (Mn), chrome (Cr), vanadium (V), titanium (Ti), and niobium (Nb).