US 10,256,395 B2 · Capped magnetic memory

Abstract

An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ), between first and second electrodes, comprising a dielectric layer between fixed and free layers; a dielectric film directly contacting sidewalls of the first electrode; and a metallic layer coupled to the sidewalls via the dielectric film; wherein (a) a vertical axis intersects the first and second electrodes and the MTJ but not the metallic layer, (b) a first horizontal axis intersects the metallic layer, the dielectric film, and the first electrode; and (c) a second horizontal axis, between the first horizontal axis and the MTJ, intersects the dielectric film and the first electrode but not the capping layer. Other embodiments are described herein.

Claims19

Dependent claims

An apparatus comprising:

a first electrode on a substrate;
a second electrode between the first electrode and the substrate;
a perpendicular magnetic tunnel junction (pMTJ), between the first and second electrodes, comprising a dielectric layer between a fixed layer and a free layer;
a protective film directly contacting sidewalls of the first electrode;
and
a capping layer on sidewalls of the first electrode;
wherein (a) a vertical axis intersects the first and second electrodes and the pMTJ but not the capping layer, (b) a first horizontal axis, orthogonal to the vertical axis, intersects the capping layer, the protective film, and the first electrode but not the pMTJ;
and (c) a second horizontal axis, between the first horizontal axis and the pMTJ, intersects the protective film and the first electrode but not the capping layer or the pMTJ.

5 more elements

Dependencies are inferred from the claim text.

Capped magnetic memory

Life of this patent

Capped magnetic memory

Life of this patent

Abstract

Claims19