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US 10,256,394 B2Granted
Magnetoresistive element and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsShumpei Omine, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
Life of this patent
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Abstract
A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.
Claims16
A magnetoresistive element, comprising:
- a first layer having a CsCl structure and containing CoxAl100-x where 46 atomic % ≤x <56 atomic %;
- a first magnetic layer;
- a first nonmagnetic layer between the first layer and the first magnetic layer;
- and
- a second magnetic layer, which is disposed between the first layer and the first nonmagnetic layer and contains Mn and Ga.
2 more elements
Dependencies are inferred from the claim text.