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US 10,256,392 B1Granted
Vertical transmon qubit device
AssigneeInternational Business Machines Corporation
InventorsMarkus Brink, Sami Rosenblatt, Rasit Onur Topaloglu
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AssigneeInternational Business Machines Corporation
InventorsMarkus Brink, Sami Rosenblatt, Rasit Onur Topaloglu
Estimating the term…
Techniques for a vertical transmon qubit device are provided. In one embodiment, a chip surface base device structure is provided that comprises a first superconducting material physically coupled to a crystalline substrate, wherein the crystalline substrate is physically coupled to a second superconducting material, wherein the second superconducting material is physically coupled to a second crystalline substrate. In one implementation, the chip surface base device structure also comprises a vertical Josephson junction located in a via of the crystalline substrate, the vertical Josephson junction comprising the first superconducting material, a tunnel barrier, and the second superconducting material. In one implementation, the chip surface base device structure also comprises a transmon qubit comprising the vertical Josephson junction and a capacitor formed between the first superconducting material and the second superconducting material.
A chip surface base device structure, comprising:
A method, comprising:
A chip surface base device structure, comprising:
A method, comprising:
A chip surface base device structure, comprising:
Dependencies are inferred from the claim text.