Solid state lighting devices with accessible electrodes and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
Life of this patent
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Abstract
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
Claims20
A light emitting die, comprising:
- a first semiconductor material having a first surface;
- a second semiconductor material having a second surface facing away from the first surface;
- an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have an overall depth;
- a first electrode in contact with the first surface of the first semiconductor material;
- and
- a second electrode in contact with the second surface of the second semiconductor material;
- wherein a portion of the second electrode is exposed by a notch of the first semiconductor material, the active region, and the second semiconductor material, and wherein the notch has a depth less than the overall depth.
A light emitting device, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have an overall depth;
- a first electrode in contact with the first semiconductor material;
- and
- a second electrode in contact with the second semiconductor material;
- wherein a portion of the second electrode is exposed by a notch of the first semiconductor material, the active region, and the second semiconductor material, and wherein the notch has a depth less than the overall depth.
A solid state lighting (“SSL”) die, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials, wherein the first semiconductor material, the active region, and the second semiconductor material together have an overall depth;
- a first electrode in contact with the first semiconductor material;
- and
- a second electrode in contact with the second semiconductor material;
- wherein a portion of the second electrode is exposed by a notch of the first semiconductor material, the active region, and the second semiconductor material, and wherein the notch has a depth less than the overall depth.
Dependencies are inferred from the claim text.