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US 10,256,368 B2Granted
Semiconductor substrate for controlling a strain
AssigneeSK Siltron Co., Ltd.
InventorsJung-Hyun Eum, Kwang-Yong Choi, Jae-Ho Song, Dong-Kun Lee, Kye-Jin Lee, Young-Jae Choi
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Abstract
Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.
Claims22
A semiconductor substrate, comprising:
- a substrate;
- one or more compound semiconductor layers disposed on the substrate;
- and
- one or more control layers disposed between the compound semiconductor layers,
- wherein each control layer comprises a plurality of nitride semiconductor layers including at least Al,
- wherein the plurality of nitride semiconductor layers include Al(1-x)GaxN (0≤x≤1),
- wherein each control layer comprises:
- first and third nitride semiconductor layers including AlGaN;
- and
- a second nitride semiconductor layer disposed between the first and third nitride semiconductor layers and including AlN, and
- wherein at least one of the first and third nitride semiconductor layers is divided into first and second sections in a thickness direction, a concentration of Al in one of the first and second sections varies linearly, and a concentration of Al in the other of the first and second sections varies non-linearly.
8 more elements
A semiconductor substrate, comprising:
- a substrate;
- one or more compound semiconductor layers disposed on the substrate;
- and
- one or more control layers disposed between the compound semiconductor layers,
- wherein the control layer comprises:
- a plurality of first nitride semiconductor layers;
- and
- a plurality of second nitride semiconductor layers disposed between the plurality of first nitride semiconductor layers,
- wherein each of the plurality of second nitride semiconductor layers include AlN and a dopant, and
- wherein a concentration of the dopant in each of the plurality of second nitride semiconductor layers increases from the substrate to the compound semiconductor layer of an uppermost layer among the one or more compound semiconductor layers.
7 more elements
A semiconductor substrate, comprising:
- a substrate;
- one or more compound semiconductor layers disposed on the substrate;
- and
- one or more control layers disposed between the compound semiconductor layers,
- wherein the control layer comprises:
- a plurality of AlN layers;
- and
- a plurality of AlGaN layers disposed alternately with the AlN layers, and
- wherein a concentration of Al in each of the AlN layers is greater than that in each of the AlGaN layers and varies.
6 more elements
A semiconductor substrate, comprising:
- a substrate;
- one or more compound semiconductor layers disposed on the substrate;
- and
- one or more control layers disposed between the compound semiconductor layers,
- wherein the one or more control layers comprises:
- first and third nitride semiconductor layers including AlGaN;
- and
- a second nitride semiconductor layer disposed between the first and third nitride semiconductor layers and including AlN,
- wherein at least one of the first and third nitride semiconductor layers is divided into first and second sections in a thickness direction, a concentration of Al in one of the first and second sections varies linearly, and a concentration of Al in the other of the first and second sections varies non-linearly,
- wherein an uppermost layer among the compound semiconductor layers is a conductive semiconductor layer, and
- wherein the conductive semiconductor layer has a thickness of 2 μm to 6 μm.
8 more elements
Dependencies are inferred from the claim text.