Ultrathin solid state dies and methods of manufacturing the same
AssigneeMicron Technology, Inc.
InventorsVladimir Odnoblyudov, Martin F. Schubert
Life of this patent
Estimating the term…
Abstract
Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.
Claims20
A method for forming an SST die, comprising:
- forming a first semiconductor material on a growth substrate;
- forming an active region on the first semiconductor material;
- forming a second semiconductor material on the active region;
- forming a first contact on the first semiconductor material;
- forming a second contact on the second semiconductor material;
- forming an insulating material on the first semiconductor material, the active region, the second semiconductor material, the first contact and the second contact;
- forming a conductive material on the insulating material and in contact with the first contact and the second contact;
- and
- forming an opening in the growth substrate to form a support structure, wherein the first contact is aligned with the support structure, and wherein the second contact is aligned with the opening.
A method for forming an SST die, comprising:
- forming a first semiconductor material on a growth substrate;
- forming an active region on the first semiconductor material;
- forming a second semiconductor material on the active region;
- forming an emitter by forming a second contact on the second semiconductor material;
- forming an SSL opening in the second semiconductor material and the active region;
- forming a first contact in the SSL opening on the first semiconductor material;
- forming an insulating material on the first semiconductor material, the active region, the second semiconductor material, the first contact and the second contact;
- forming a conductive material on the insulating material and in contact with the first contact and the second contact;
- and
- forming an opening in the growth substrate to form a support structure, wherein the first contact is aligned with the support structure, and wherein the second contact is aligned with the opening.
A method for forming an SST die, comprising:
- forming a buffer material on a growth substrate;
- forming a first semiconductor material on the buffer material;
- forming an active region on the first semiconductor material;
- forming a second semiconductor material on the active region;
- forming a first contact on the first semiconductor material;
- forming a second contact on the second semiconductor material;
- forming an insulating material on the first semiconductor material, the active region, the second semiconductor material, the first contact and the second contact;
- forming a conductive material on the insulating material and in contact with the first contact and the second contact;
- and
- forming an opening in the growth substrate to form a support structure, wherein the first contact is aligned with the support structure, and wherein the second contact is aligned with the opening.
Dependencies are inferred from the claim text.