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AssigneeUiversity-Industry Foundation (Uif), Yonsei University
InventorsJae-Min Myoung, Sung-Doo Back
Estimating the term…
Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.
A light-emitting diode comprising:
A light-emitting diode comprising:
A light-emitting diode comprising:
A light-emitting diode comprising:
A light-emitting diode comprising:
A light-emitting diode comprising:
A method of fabricating a light-emitting diode comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Of bodies, e.g. forming semiconductor layers: having light-emitting regions comprising only Group II-IV materials
Characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous: within the light-emitting regions
Bodies: characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
Materials of the light-emitting regions: comprising only Group II-VI materials, e.g. ZnO
About 10 years 11 months of term left · ends 26 Sep 2037 (estimated)
This application claims priority of Korean Patent Application No. 10-2016-0145385, filed on Nov. 2, 2016, in the KIPO (Korean Intellectual Property Office), the disclosure of which is incorporated herein entirely by reference.
Field of the Invention
The present disclosure relates to a semiconductor device, and more particularly, to a light-emitting diode and a method of fabricating the same.
The above and other features and advantages will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments with reference to the attached drawings, in which:
FIG. 1 is a cross-sectional view of a light-emitting diode 10 according to an embodiment of the present invention;
FIGS. 2A through 2D are scanning electron microscope (SEM) images of nano-discs of zinc oxide according to an embodiment of the present invention;
In the following description, the same or similar elements are labeled with the same or similar reference numbers.
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “includes”, “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. In addition, a term such as a “unit”, a “module”, a “block” or like, when used in the specification, represents a unit that processes at least one function or operation, and the unit or the like may be implemented by hardware or software or a combination of hardware and software.