Monolithically integrated high voltage photovoltaics and light emitting diode with textured surface

A method of forming an electrical device comprising:

• forming a substrate having a first textured surface of a first plurality of triangular shaped peaks;
• forming a second textured surface on the substrate, the second textured surface including a second plurality of triangular shaped peaks;
• conformally forming a first conductivity type III-V semiconductor material on the second textured surface of the substrate;
• conformally forming a second conductivity type III-V semiconductor material on the first conductivity type III-V semiconductor material to produce a third textured surface for a photovoltaic device;
• and
• forming a light emitting diode on the third textured surface of the photovoltaic device.

A electrical device comprising:

• a first type III-V semiconductor material having a first conductivity type for a junction of a photovoltaic device in direct contact with a textured surface of the semiconductor substrate, the first type III-V semiconductor material having the first conductivity type is a continuous layer of triangular geometry islands that are in contact end to end that is present on correspondingly textured surface of the substrate;
• a conformal layer of second type III-V semiconductor material having a second conductivity for the junction of the photovoltaic device is in direct contact with the first type III-V semiconductor material to provide a p-n junction, wherein the conformal layer over the continuous layer of triangular geometry islands provides a textured light receiving surface for the photovoltaic device;
• and
• a light emitting diode present on the textured surface of the photovoltaic device.