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US 10,256,355 B2Granted
Photoelectric converter with a multi-layered quantum dot film
AssigneeKYOCERA Corporation
InventorToru Nakayama
Life of this patent
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Abstract
A photoelectric converter includes two semiconductor layers forming a p/n junction as a photoelectric conversion layer. At least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and the quantum dot integrated film includes two or greater quantum dot layers having different energy levels. In a case that the quantum dot integrated film is a p-type, a quantum dot layer having a large difference between an energy level (Bv) of a valence band and a Fermi level (Ef) is disposed closer to a p/n junction surface.
Claims10
A photoelectric converter comprising:
- two semiconductor layers forming a p/n junction as a photoelectric conversion layer,
- wherein at least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and
- the quantum dot integrated film is a p-type and comprises two or greater quantum dot layers having different energy levels with a quantum dot layer having a large difference between an energy level Bv of a valence band and a Fermi level Efis disposed closer to a surface of the p/n junction.
A photoelectric converter comprising:
- two semiconductor layers forming a p/n junction as a photoelectric conversion layer,
- wherein at least one semiconductor layer of the two semiconductor layers is a quantum dot integrated film, and
- the quantum dot integrated film is an n-type, a quantum dot layer having a large difference between an energy level BC of a conduction band and a Fermi level Efis disposed closer to a surface of the p/n junction.
Dependencies are inferred from the claim text.