Thin film transistor, array substrate and their manufacturing methods, and display apparatus

A method for manufacturing an array substrate, comprising steps of forming a plurality of insulation layers, wherein the step of forming at least one of the plurality of insulation layers comprises:

• forming a siloxane material layer;
• oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer;
• and
• curing the oxidized siloxane material layer to obtain the insulation layer,
• wherein the array substrate comprises:
• one or more insulation layers, a gate electrode, at least two source electrodes, and an active layer, wherein at least one insulation layer is a siloxane material layer pattern with an inorganic silicon film covering its outer surface,
• wherein the insulation layer comprises a first insulation layer arranged between the gate electrode and the at least two source electrodes, and a second insulation layer arranged between the at least two source electrodes and the active layer;
• wherein the active layer is arranged between the first insulation layer and the at least two source electrodes;
• and
• wherein a first via-hole is formed through the second insulation layer at a first position corresponding to the active layer, and the at least two source electrodes are connected with the active layer through the first via-hole.

A thin film transistor, comprising:

• one or more insulation layers, a gate electrode, at least two source electrodes, and an active layer, wherein at least one insulation layer is a siloxane material layer pattern with an inorganic silicon film covering its outer surface,
• wherein the insulation layer comprises a first insulation layer arranged between the gate electrode and the at least two source electrodes, and a second insulation layer arranged between the at least two source electrodes and the active layer;
• wherein the active layer is arranged between the first insulation layer and the at least two source electrodes;
• and
• wherein a first via-hole is formed through the second insulation layer at a first position corresponding to the active layer, and the at least two source electrodes are connected with the active layer through the first via-hole.

An array substrate, comprising:

• one or more insulation layers, a gate electrode, at least two source electrodes, and an active layer, wherein at least one insulation layer is a siloxane material layer pattern with an inorganic silicon film covering its outer surface,
• wherein the insulation layer comprises a first insulation layer arranged between the gate electrode and the at least two source electrodes, and a second insulation layer arranged between the at least two source electrodes and the active layer;
• wherein the active layer is arranged between the first insulation layer and the at least two source electrodes;
• and
• wherein a first via-hole is formed through the second insulation layer at a first position corresponding to the active layer, and the at least two source electrodes are connected with the active layer through the first via-hole.