Self-aligned silicon germanium FinFET with relaxed channel region

A device, comprising:

• a substrate including a first semiconductor material;
• a plurality of fins on the substrate and spaced apart from one another along a first direction, each of the fins including the first semiconductor material and a second semiconductor material;
• source and drain extensions that extend transverse to the first direction from respective sidewalls of the plurality of fins;
• a gate structure that contacts at least three surfaces of each of the plurality of fins;
• a source contact coupled to the source extensions;
• and
• a drain contact coupled to the drain extensions.

A device, comprising:

• a substrate;
• a plurality of first fins on the substrate and spaced apart from one another along a first direction, each of the plurality of first fins having respective source and drain regions aligned with one another along a second direction that is transverse to the first direction;
• a plurality of second fins on the substrate and spaced apart from one another along the first direction, the plurality of second fins being spaced apart from the plurality of first fins along the second direction, each of the plurality of second fins having respective source and drain regions aligned with one another along the second direction;
• and
• a plurality of source and drain extensions that extend along the second direction from respective sidewalls of each of the first fins and the second fins.