High-voltage semiconductor device and method for manufacturing the same

A method for fabricating a high-voltage semiconductor device, comprising:

• providing a semiconductor substrate having a first conductivity type;
• forming a first doping region having a second conductivity type in the semiconductor substrate;
• forming an epitaxial layer on the semiconductor substrate;
• forming a body region having the first conductivity type in the epitaxial layer and forming a second doping region and a third doping region that have the second conductivity type, respectively in the epitaxial layer, wherein the body region is on the first doping region, and the second and third doping regions are on both opposite sides of the body region, so as to adjoin the body region, wherein the second doping region and the third doping region are in contact with the body region;
• forming a field insulating layer in the second doping region;
• forming a gate structure on the epitaxial layer, wherein the gate structure covers a portion of the field insulating layer;
• and
• forming a source region in the body region and forming a drain region in the second doping region.