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US 10,256,338 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakeharu Koga
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a first epitaxial layer of a first conductivity type, a first semiconductor region of the first conductivity type, a second epitaxial layer of a second conductivity type, a second semiconductor region of the first conductivity type, a gate insulating film, a gate electrode, an interlayer insulating film, a source electrode; and a gate electrode pad. The first semiconductor region is not provided beneath the gate electrode pad.
Claims4
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first epitaxial layer of the first conductivity type provided on a front surface of the semiconductor substrate;
- a first semiconductor region of the first conductivity type selectively provided in the first epitaxial layer, an impurity concentration of the first semiconductor region being higher than that of the first epitaxial layer;
- a second epitaxial layer of a second conductivity type provided on a first side of the first epitaxial layer opposite a second side of the first epitaxial layer facing the semiconductor substrate;
- a second semiconductor region of the first conductivity type selectively provided in the second epitaxial layer, an impurity concentration of the second semiconductor region being higher than an impurity concentration of the first epitaxial layer;
- a trench penetrating the second semiconductor region and the second epitaxial layer, the trench reaching the first semiconductor region;
- a gate electrode provided in the trench, via a gate insulating film;
- a first electrode contacting the second semiconductor region and the second epitaxial layer;
- a second electrode provided on a rear surface of the semiconductor substrate;
- and
- a gate electrode pad electrically connected to the gate electrode, wherein
- the first semiconductor region is not provided beneath the gate electrode pad.
9 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type;
- a first epitaxial layer of the first conductivity type provided on a front surface of the semiconductor substrate;
- a first semiconductor region of the first conductivity type selectively provided in the first epitaxial layer, an impurity concentration of the first semiconductor region being higher than that of the first epitaxial layer;
- a second epitaxial layer of a second conductivity type provided on a first side of the first epitaxial layer opposite a second side of the first epitaxial layer facing the semiconductor substrate;
- a second semiconductor region of the first conductivity type selectively provided in the second epitaxial layer, an impurity concentration of the second semiconductor region being higher than an impurity concentration of the first epitaxial layer;
- a trench penetrating the second semiconductor region and the second epitaxial layer, the trench reaching the first semiconductor region;
- a gate electrode provided in the trench, via a gate insulating film;
- a first electrode contacting the second semiconductor region and the second epitaxial layer;
- a second electrode provided on a rear surface of the semiconductor substrate;
- and
- a gate electrode pad electrically connected to the gate electrode, wherein
- in a cross-sectional view, an end of the first semiconductor region closest to a connecting region connecting the gate electrode and the gate electrode pad is separated, in a direction substantially parallel to the front surface of the semiconductor substrate, from an end of the gate electrode pad closest to the connecting region.
9 more elements
Dependencies are inferred from the claim text.