Power transistor with terminal trenches in terminal resurf regions

A transistor, comprising:

• an n-type drain contact layer;
• an n-type drain layer on the n-type drain contact layer;
• an oxide layer above the n-type drain layer and circumscribing a transistor region;
• a p-type body region within the transistor region and near a top portion of the n-type drain layer;
• a p-type terminal region extending from under the oxide layer to an edge of the transistor region, and forming a contiguous junction with the p-type body region;
• body trenches within the transistor region and interleaving with the p-type body region;
• and
• terminal trenches outside the transistor region and interleaving with the p-type terminal region.

An integrated circuit, comprising:

• an n-type drain contact layer;
• an n-type drain layer on the n-type drain contact layer;
• an oxide layer above the n-type drain layer and circumscribing transistor regions;
• and
• transistors, each including:
• a p-type body region within at least one of the transistor regions and near a top portion of the n-type drain layer;
• a p-type terminal region extending from under the oxide layer to an edge of at least one of the transistor regions, and forming a contiguous junction with the p-type body region;
• body trenches within at least one of the transistor regions and interleaving with the p-type body region;
• and
• terminal trenches outside at least one of the transistor regions and interleaving with the p-type terminal region.