US 10,256,333 B2 · High electron mobility transistor

Abstract

The embodiments of the present invention disclose a high electron mobility transistor, comprising: a substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source electrode, a drain electrode, and a schottky gate electrode located between the source electrode and the drain electrode, all located on the barrier layer; and at least one semiconductor field ring located on the barrier layer and between the schottky gate electrode and the drain electrode. In the embodiments of the present invention, a concentration of two-dimensional electron gas at an interface between a barrier layer and a channel layer can be adjusted. Therefore, the concentration effect of the electric field at an edge of a gate is effectively improved, and the breakdown voltage of high electron mobility transistors is increased.

Claims17

Dependent claims

A high electron mobility transistor, comprising:

a substrate;
a channel layer located on the substrate;
a barrier layer located on the channel layer;
a source electrode, a drain electrode, and a schottky gate electrode located between the source electrode and the drain electrode, all located on the barrier layer;
and
at least one semiconductor field ring located on the barrier layer and between the schottky gate electrode and the drain electrode;
wherein the at least one semiconductor field ring has a lattice constant greater than that of the barrier layer;
and
wherein the at least two semiconductor field rings comprise a first semiconductor field ring close to the schottky gate electrode and a second semiconductor field ring close to the drain electrode, and a thickness of the first semiconductor field ring is greater than that of the second semiconductor field ring.

6 more elements

Dependencies are inferred from the claim text.

High electron mobility transistor

Life of this patent

High electron mobility transistor

Life of this patent

Abstract

Claims17