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US 10,256,326 B2Granted
Forming stacked nanowire semiconductor device
AssigneeInternational Business Machines Corporation
InventorsMarc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre, Sean Teehan
Life of this patent
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Abstract
A semiconductor device comprises a nanowire arranged over a substrate, a gate stack arranged around the nanowire, a spacer arranged along a sidewall of the gate stack, a cavity defined by a distal end of the nanowire and the spacer, and a source/drain region partially disposed in the cavity and in contact with the distal end of the nanowire.
Claims13
A process of forming a semiconductor device obtained by:
- forming a nanowire stack comprising a first nanowire and a second nanowire arranged on the first nanowire;
- forming a sacrificial gate over the nanowire stack;
- forming a sacrificial spacer contacting the sacrificial gate;
- removing an exposed portion of the first nanowire to form a first cavity partially defined by the sacrificial spacer, the first nanowire, and the second nanowire;
- removing the sacrificial spacer;
- depositing a layer of spacer material adjacent to the sacrificial gate and in the first cavity;
- removing a portion of the layer of spacer material to form a spacer adjacent to the sacrificial gate and the first nanowire;
- removing exposed portions of the second nanowire subsequent to removing the portion of the layer of spacer material to form a spacer adjacent to the sacrificial gate and the first nanowire;
- removing a portion of the second nanowire to form a second cavity, the second cavity partially defined by the spacer and the second nanowire;
- and
- epitaxially growing a source/drain region in the second cavity from exposed portions of the second nanowire.
8 more elements
A process of forming a semiconductor device obtained by:
- forming a semiconductor stack on a substrate, the semiconductor stack comprising a first semiconductor layer and a second semiconductor layer;
- removing portions of the semiconductor stack to form a nanowire stack, the nanowire stack comprising a first nanowire and a second nanowire;
- forming a sacrificial gate over the nanowire stack;
- depositing a first layer of spacer material along sidewalls of the sacrificial gate;
- removing portions of the spacer material to form a sacrificial spacer along sidewalls of the sacrificial gate;
- removing an exposed portion of the first nanowire to form a first cavity partially defined by the sacrificial spacer, the first nanowire, and the second nanowire;
- removing the sacrificial spacer;
- depositing a second layer of spacer material contacting the sacrificial gate and in the first cavity;
- removing a portion of the second layer of spacer material to form a spacer adjacent to the sacrificial gate and the first nanowire;
- removing exposed portions of the second nanowire;
- removing a portion of the second nanowire to form a second cavity, the second cavity partially defined by the spacer and the second nanowire;
- and
- epitaxially growing a source/drain region in the second cavity from exposed portions of the second nanowire.
10 more elements
Dependencies are inferred from the claim text.