Co-doping process for n-MOS source drain application
AssigneeApplied Materials, Inc.
InventorsXinyu Bao, Zhiyuan Ye, Hua Chung
Life of this patent
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Abstract
A device comprising Si:As source and drain extensions and Si:As or Si:P source and drain features formed using selective epitaxial growth and a method of forming the same is provided. The epitaxial layers used for the source and drain extensions and the source and drain features herein are deposited by simultaneous film formation and film etching, wherein the deposited material on the monocrystalline layer is etched at a slower rate than deposition material deposited on non-monocrystalline location of a substrate. As a result, an epitaxial layer is deposited on the monocrystalline surfaces, and a layer is not deposited on non-monocrystalline surfaces of the same base material, such as silicon.
Claims18
A method of depositing a layer, comprising:
- heating a substrate in a processing chamber to a processing temperature, the substrate having one or more monocrystalline surfaces and one or more non-monocrystalline surfaces;
- flowing a processing gas into the processing chamber, the processing gas comprising a halogenated silicon precursor, an arsenic precursor, and a carbon precursor;
- and
- selectively depositing an epitaxial Si:As:C layer on the one or more monocrystalline surfaces, wherein the epitaxial Si:As:C layer comprises a combination of epitaxial Si:As and epitaxial Si:As:C sublayers.
A method of depositing a layer, comprising:
- heating a substrate in a processing chamber to a processing temperature, the substrate having one or more monocrystalline surfaces and one or more non-monocrystalline surfaces;
- flowing a processing gas into the processing chamber, the processing gas comprising a halogenated silicon precursor, an arsenic precursor, and a carbon precursor;
- selectively depositing an epitaxial Si:As:C layer on the one or more monocrystalline surfaces;
- and
- depositing an epitaxial silicon layer on the epitaxial Si:As:C layer, the epitaxial silicon layer having an arsenic or phosphorous concentration between 3×1020 cm−3 and about 5×1021 cm−3.
A method of forming a device, comprising:
- heating a substrate to a processing temperature in a processing chamber, the substrate having one or more features disposed on the substrate, the substrate and the one or more features having at least monocrystalline surfaces and amorphous surfaces;
- flowing a gas into the processing chamber, the gas comprising a halogenated silane, an arsenic precursor, and a carbon precursor;
- selectively depositing an epitaxial Si:As:C layer on the monocrystalline surfaces;
- and
- selectively depositing an epitaxial silicon based layer on the epitaxial Si:As:C layer, wherein a dopant of the epitaxial silicon based layer comprises arsenic or phosphorous, and wherein a concentration of the dopant in the epitaxial silicon based layer is more than a concentration of arsenic in the epitaxial Si:As:C layer.
A semiconductor device, comprising:
- a substrate;
- one or more shallow trench isolation regions defining an active region on the substrate, each of the one or more shallow trench isolation regions comprising a dielectric material;
- an undoped monocrystalline feature disposed on the substrate in the active region;
- and
- a first epitaxial silicon layer comprising:
- a horizontal portion located on the substrate, the horizontal portion having a first end proximate to one of the one or more shallow trench isolation regions and a second end adjacent to the undoped monocrystalline feature, wherein the first end has a first arsenic concentration and a first carbon concentration at a distance from the substrate;
- and
- a vertical portion normal to the horizontal portion and adjacent to the undoped monocrystalline feature, wherein the vertical portion has a third end adjacent to the second end of the horizontal portion and a fourth end distal to the third end, the fourth end having a second arsenic concentration and a second carbon concentration at a distance from the horizontal portion, wherein the first arsenic concentration and the second arsenic concentration have a variation of less than about 10%, and wherein the first carbon concentration and the second carbon concentration have a variation of less than about 10%.
Dependencies are inferred from the claim text.