Thin film transistor and method for fabricating the same, array substrate and display device
AssigneeBoe Technology Group Co., Ltd.
InventorsChunsheng Jiang, Xuyuan Li, Wei Liu, Xiaming Zhu
Life of this patent
Estimating the term…
Abstract
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain. The thin film transistor further comprises a copper alloy layer which is arranged on a side of the gate facing the active layer.
Claims7
A method for fabricating a thin film transistor, the thin film transistor is arranged on a substrate plate and comprises a copper gate, a gate insulating layer, an active layer, a source, and a drain, wherein the method comprises-forming a first copper alloy layer on a side of the gate facing the active layer, and annealing the thin film transistor in which the active layer and the first copper alloy layer have been formed, wherein the first copper alloy layer is a copper-chromium alloy layer, and chromium atoms in the first copper alloy layer precipitate during annealing to an interface between the copper gate and the first copper alloy layer, to form a chromium film for preventing copper atoms from diffusing and the copper gate from oxidation.
Dependencies are inferred from the claim text.