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US 10,256,309 B2Granted
Memory cells having electrically conductive nanodots
AssigneeMicron Technology, Inc.
InventorNirmal Ramaswamy
Life of this patent
Estimating the term…
Abstract
Memory cells having electrically conductive nanodots between a charge storage material and a control gate are useful in non-volatile memory devices and electronic systems.
Claims20
A memory cell, comprising:
- a first dielectric between a charge storage material and a semiconductor;
- a plurality of electrically conductive nanodots between the charge storage material and a control gate;
- and
- a second dielectric between the control gate and the plurality of electrically conductive nanodots;
- wherein each electrically conductive nanodot of the plurality of electrically conductive nanodots is
- in contact with a particular surface between the charge storage material and the second dielectric;
- and
- wherein a portion of the second dielectric is in contact with the particular surface.
5 more elements
A memory cell, comprising:
- a first dielectric between an electrically conductive charge storage material and a semiconductor;
- a plurality of metal-containing electrically conductive nanodots between the electrically conductive charge storage material and a control gate;
- a dielectric barrier between the plurality of metal-containing electrically conductive nanodots and the electrically conductive charge storage material;
- and
- a second dielectric between the control gate and the metal-containing electrically conductive nanodots;
- wherein each metal-containing electrically conductive nanodot of the plurality of metal-containing electrically conductive nanodots is
- in contact with a surface of the dielectric barrier;
- and
- wherein a portion of the second dielectric is in contact with the surface of the dielectric barrier.
6 more elements
A memory cell, comprising:
- a first dielectric between an electrically conductive silicon-containing charge storage material and a semiconductor;
- a plurality of metal-containing electrically conductive nanodots between the electrically conductive silicon-containing charge storage material and a control gate;
- a nitridized dielectric barrier between the plurality of metal-containing electrically conductive nanodots and the electrically conductive silicon-containing charge storage material;
- and
- a second dielectric between the control gate and the metal-containing electrically conductive nanodots;
- wherein each metal-containing electrically conductive nanodot of the plurality of metal-containing electrically conductive nanodots is
- in contact with a surface of the nitridized dielectric barrier;
- and
- wherein a portion of the second dielectric is in contact with the surface of the nitridized dielectric barrier.
6 more elements
Dependencies are inferred from the claim text.