Semiconductor device
AssigneeMacronix International Co., Ltd.
InventorsYu-Chin Chien, Ching-Lin Chan, Cheng-Chi Lin
Life of this patent
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Abstract
A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.
Claims16
A semiconductor device, comprising:
- a first doped region of a first conductive type, located in a substrate;
- a second doped region of the first conductive type, located in the substrate and located at a side of the first doped region, and a top-view pattern of the second doped region has at least one recess portion;
- and
- a third doped region of a second conductive type, located in the substrate and located between the first doped region and the second doped region, and a top-view pattern of the third doped region has at least one protruded portion in correspondence with the at least one recess portion,
- wherein the third doped region has a body portion, the at least one protruded portion connected with the body portion, and the at least one protruded portion extends toward a center of the semiconductor device.
A semiconductor device, comprising:
- a first doped region of a first conductive type, located in a substrate;
- a second doped region of the first conductive type, located in the substrate and located at a side of the first doped region;
- a third doped region of a second conductive type, located in the substrate and located between the first doped region and the second doped region, wherein the third doped region surrounds an area of the second doped region from outside of the second doped region;
- a first stack, located on the substrate between the first doped region and the third doped region, the first stack comprises a first insulating layer and a first conductive structure sequentially stacked on the substrate;
- and
- a second stack, located on the substrate, and located between the second doped region and the third doped region, the second stack comprises a second insulating layer and a second conductive structure sequentially stacked on the substrate.
Dependencies are inferred from the claim text.