High doped III-V source/drain junctions for field effect transistors
AssigneesInternational Business Machines Corporation, STMicroelectronics S.r.l., Globalfoundries Inc.
InventorsXiuyu Cai, Qing Liu, Kejia Wang, Ruilong Xie, Chun-Chen Yeh
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Abstract
A semiconductor device includes a fin patterned in a substrate; a gate disposed over and substantially perpendicular to the fin; a pair of epitaxial contacts including a III-V material over the fin and on opposing sides of the gate; and a channel region between the pair of epitaxial contacts under the gate including an undoped III-V material between doped III-V materials, the doped III-V materials including a dopant in an amount in a range from about 1e18 to about 1e20 atoms/cm3 and contacting the epitaxial contacts.
Claims17
A semiconductor device, comprising:
- a gate arranged on a substrate;
- a pair of epitaxial contacts comprising a III-V material arranged on opposing sides of the gate;
- a channel region arranged underneath the gate and between the pair of epitaxial contacts, the channel region comprising a discrete undoped III-V material region between doped III V material regions;
- and
- a buffer layer between the channel region and the substrate, the buffer layer comprising copper doped silicon.
A semiconductor device, comprising:
- a gate arranged on a substrate;
- a pair of epitaxial contacts comprising a III-V material arranged on opposing sides of the gate;
- a channel region arranged underneath the gate and between the pair of epitaxial contacts, the channel region comprising a discrete undoped III-V material region between doped III-V material regions;
- and
- a buffer layer between the channel region and the substrate, the buffer layer comprising carbon doped silicon.
Dependencies are inferred from the claim text.