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US 10,256,303 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTatsuya Naito
Life of this patent
Estimating the term…
Abstract
Provided is a semiconductor device including a plurality of dummy trench portions that are provided in a front surface side of a semiconductor substrate and each have provided therein an electrode to which an emitter potential is supplied, and a gate trench portion that is provided in a manner to surround two or more dummy trench portions from among the plurality of dummy trench portions in the front surface side of the semiconductor substrate and has provided therein an electrode to which a gate potential is supplied.
Claims18
A semiconductor device comprising:
- a plurality of dummy trench portions that are provided in a front surface side of a semiconductor substrate and each have provided therein an electrode to which an emitter potential is supplied;
- and
- a gate trench portion that extends in a first direction and is provided in a manner to be sandwiched at least in the first direction by two or more dummy trench portions from among the plurality of dummy trench portions in the front surface side of the semiconductor substrate and has provided therein an electrode to which a gate potential is supplied.
A semiconductor device comprising:
- at least one dummy trench portion that is provided in a front surface side of a semiconductor substrate and each have provided therein an electrode to which an emitter potential is supplied;
- and
- a gate trench portion that is provided in a manner to be surrounded by a continuous dummy trench portion from among the at least one dummy trench portion in the front surface side of the semiconductor substrate and has provided therein an electrode to which a gate potential is supplied.
Dependencies are inferred from the claim text.