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US 10,256,300 B2Granted
Semiconductor device
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsShinya Natsume, Masaki Inoue, Mitsuo Tanaka
Life of this patent
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Abstract
A semiconductor device includes: an active layer that is located in an SOI substrate, and in which an element included in a circuit is formed; a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer; a deep trench isolation (DTI) region that is formed in the active layer to surround a whole formation region of the element in plan view, and extends from an upper surface to a lower surface of the active layer; and a first conductive film formed above the element. The DTI region has a first hole inside, and a film thickness of the first conductive film is greater than a thickness of the active layer.
Claims21
A semiconductor device including:
- a semiconductor chip that has a silicon on insulator (SOI) substrate carrying a circuit;
- and a resin mold that seals the semiconductor chip, the semiconductor device comprising:
- an active layer that is located in the SOI substrate, and in which an element included in the circuit is formed;
- a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer;
- a deep trench isolation (DTI) region that is formed in the active layer to surround a whole of a formation region of the element in plan view, and extends from a surface of the active layer to the buried insulation layer;
- a first conductive film formed above the element;
- a first interlayer insulation film formed between the active layer and the first conductive film;
- and
- a support structure made of a conductive film that passes through the first interlayer insulation film and is in contact with the active layer and the first conductive film,
- wherein the DTI region has a first hole inside,
- a film thickness of the first conductive film is greater than a thickness of the active layer, and
- the support structure made of the conductive film is in contact with the DTI region, and surrounds a whole of the element in plan view.
9 more elements
A semiconductor device including:
- a semiconductor chip that has a silicon on insulator (SOI) substrate carrying a circuit;
- and a resin mold that seals the semiconductor chip, the semiconductor device comprising:
- an active layer that is located in the SOI substrate, and in which an element included in the circuit is formed;
- a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer;
- a deep trench isolation (DTI) region that is formed in the active layer to surround a whole of a formation region of the element in plan view, and extends from a surface of the active layer to the buried insulation layer;
- and
- a first conductive film formed above the element,
- a second conductive film formed in a same layer as the first conductive film, to surround a whole of the first conductive film in plan view;
- and
- a protection film filling a gap between the first conductive film and the second conductive film,
- wherein the DTI region has a first hole inside,
- a film thickness of the first conductive film is greater than a thickness of the active layer, and
- the protection film has a second hole between the first conductive film and the second conductive film.
10 more elements
A semiconductor device including:
- a semiconductor chip that has a silicon on insulator (SOI) substrate carrying a circuit;
- and a resin mold that seals the semiconductor chip, the semiconductor device comprising:
- an active layer that is located in the SOI substrate, and in which an element included in the circuit is formed;
- a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer;
- a deep trench isolation (DTI) region that is formed in the active layer to surround a whole of a formation region of the element in plan view, and extends from a surface of the active layer to the buried insulation layer;
- a first conductive film formed above the element;
- and
- a second conductive film formed in a same layer as the first conductive film, above the element,
- wherein the DTI region has a first hole inside,
- a film thickness of the first conductive film is greater than a thickness of the active layer, and
- a film thickness of the second conductive film is greater than the thickness of the active layer.
8 more elements
A semiconductor device including:
- a semiconductor chip that has a silicon on insulator (SOI) substrate carrying a circuit;
- and a resin mold that seals the semiconductor chip, the semiconductor device comprising:
- an active layer that is located in the SOI substrate, and in which an element included in the circuit is formed;
- a buried insulation layer that is located in the SOI substrate, and is in contact with the active layer;
- a deep trench isolation (DTI) region that is formed in the active layer to surround a whole of a formation region of the element in plan view, and extends from a surface of the active layer to the buried insulation layer;
- and
- a first conductive film formed above the element,
- wherein the DTI region has a first hole inside,
- a film thickness of the first conductive film is greater than a thickness of the active layer, and
- the first conductive film has a second hole inside.
7 more elements
Dependencies are inferred from the claim text.