Semiconductor structure and method for forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsTsung-Hsiung Lee, Chun-Ting Yang, Ho-Chien Chen
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. The semiconductor structure includes an isolation structure through the semiconductor layer, and the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap. The semiconductor structure also includes a contact plug structure through the semiconductor layer, and the contact plug structure has an opening with a second width, and the second width is greater than the first width.
Claims19
A semiconductor structure, comprising:
- a substrate;
- a semiconductor layer formed on the substrate;
- an isolation structure through the semiconductor layer, wherein the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap, and a dielectric layer extending from one end to an opposite end of the isolation structure;
- a contact plug structure through the semiconductor layer, wherein the contact plug structure has an opening with a second width, and the second width is greater than the first width;
- and
- an oxide layer formed between the substrate and the semiconductor layer, wherein the contact plug structure passes through the oxide layer, such that the contact plug structure is in direct contact with the substrate, wherein a sidewall of the contact plug structure in the semiconductor layer and a sidewall of the contact plug structure in the oxide layer are coplanar.
Dependencies are inferred from the claim text.