Semiconductor device

A semiconductor device comprising:

• an outside-of-well n-type region;
• a p-type well region that is surrounded by the outside-of-well n-type region and is exposed to a surface of a semiconductor substrate;
• an inside-of-well n-type region that is surrounded by the p-type well region and is exposed to the surface of the semiconductor substrate;
• and
• a gate electrode that is opposed, via an insulating film, to a surface of the p type well region in an area in which the outside-of-well n-type region and the inside-of-well n-type region are separated from each other, wherein
• the outside-of-well n-type region includes an impurity low-concentration region that is in contact with the p-type well region, and an impurity high-concentration region that is separated from the p-type well region by the impurity low-concentration region, the impurity low-concentration region containing a lower concentration of an n-type impurity than the impurity high-concentration region, and
• the impurity high-concentration region includes a first portion and a second portion, the first portion having a first thickness in a thickness direction of the semiconductor substrate, the second portion having a second thickness in the thickness direction, the second thickness being larger than the first thickness and the second portion protruding from the first portion towards the surface of the semiconductor substrate.