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US 10,256,293 B2Granted
Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
AssigneeSynopsys, Inc.
InventorsVictor Moroz, Lars Bomholt
Life of this patent
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Abstract
A structure such as an integrated circuit device is described having a line of material with critical dimensions which vary within a distribution substantially less than that of a mask element, such as a patterned resist element, used in manufacturing the line of material.
Claims21
A method for manufacturing a structure, the method comprising:
- providing in a substrate a first layer of material having a first amorphous phase region meeting a crystalline phase region at a first interface, the crystalline phase region having crystallographic planes with differing epitaxial growth rates, the first layer being oriented such that a first one of the crystallographic planes of the crystalline phase region having the slowest of the epitaxial growth rates extends vertically with respect to a top surface of the substrate;
- and
- partially recrystallizing the first amorphous phase region into a crystalline phase to form a recrystallized portion adjacent the first interface and leave a remaining portion in an amorphous phase, the remaining portion having a second interface with the recrystallized portion,
- wherein the second interface extends parallel to the first one of the crystallographic planes having the slowest of the epitaxial growth rates.
1 more element
Dependencies are inferred from the claim text.