Vertical MOSFET
AssigneeFuji Electric Co., Ltd.
InventorsShinya Takashima, Katsunori Ueno, Masaharu Edo
Life of this patent
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Abstract
In order to improve the dynamic characteristics of a vertical MOSFET using GaN, it is an objective of the present invention to reduce the resistance of a current path with a long hole movement distance in a p-type well. Provided is a vertical MOSFET including a gallium nitride layer having a main surface that is a non-polar surface; a p-type well region that is provided with a stripe shape in the main surface of the gallium nitride layer; and a stripe-shaped electrode provided above the p-type well region. Hole mobility is higher in a direction orthogonal to an extension direction of the stripe-shaped electrode than in the extension direction, among directions in a plane parallel to the main surface.
Claims3
A vertical MOSFET comprising:
- a gallium nitride layer having a main surface that is a non-polar surface;
- a p-type well region that is provided with a stripe shape in the main surface of the gallium nitride layer;
- and
- a stripe-shaped electrode provided above the p-type well region, wherein
- hole mobility is higher in a direction orthogonal to an extension direction of the stripe-shaped electrode than in the extension direction, among directions in a plane parallel to the main surface, and
- the gallium nitride layer is formed such that a current path in the p-type well region orthogonal to the extension direction of the stripe-shaped electrode is set to be in a <11-20> direction in a case that the non-polar main surface of the gallium nitride layer is in an m plane;
- and set to be in a <1-100> direction in a case that the non-polar main surface of the gallium nitride layer is in an a plane.
A vertical MOSFET comprising:
- a gallium nitride layer having a main surface in a non-polarized plane;
- and
- a p-type well region provided on a main surface of the gallium nitride layer, wherein
- in the p-type well region, hole mobility in a first direction, in which a distance travelled by holes is longest, is higher than the hole mobility in a second direction that is orthogonal to the first direction in a plane parallel to the main surface, and
- the gallium nitride layer is formed such that a current path in the p-type well region is set to be in a <11-20> direction in a case that the non-polar main surface of the gallium nitride layer is in an m plane;
- and set to be in a <1-100> direction in a case that the non-polar main surface of the gallium nitride layer is in an a plane.
Dependencies are inferred from the claim text.