Method for oxidizing a substrate surface using oxygen
AssigneeComptek Solutions Oy
InventorsPekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
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Abstract
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
Claims7
A method for producing a crystalline oxide layer on III-As, III-Sb or III-P compound semiconductor substrate, comprising in vacuum conditions
- providing a III-As, III-Sb or III-P compound semiconductor substrate having a substrate surface which is clean from amorphous native oxides;
- forming an In-containing or Sn-containing III-As, III-Sb or III-P compound semiconductor substrate surface by depositing In or Sn onto the III-As, III-Sb or III-P compound semiconductor substrate surface;
- heating the formed In-containing or Sn-containing III-As, III-Sb or III-P compound semiconductor surface to a temperature of about 250-550° C., and oxidizing it at said temperature of about 250-550° C. by introducing oxygen gas onto the surface of the substrate.
Dependencies are inferred from the claim text.