High density cross point resistive memory structures and methods for fabricating the same

A method for manufacturing a cross point resistive memory structure, the method comprising:

• providing a semiconductor substrate;
• forming a plurality of bottom electrodes in or over the semiconductor substrate;
• and
• forming a plurality of top electrodes over the plurality of bottom electrodes, wherein each top electrode in the plurality of top electrodes crosses over each bottom electrode in the plurality of bottom electrodes at cross points located in a common plane, and wherein a series of cross points formed by each respective top electrode or each respective bottom electrode includes a first cross point, a second cross point directly adjacent the first cross point, and a third cross point directly adjacent the second cross point, wherein the first cross point, the second cross point and the third cross point do not lie in a single axis.

A high density cross point resistive memory structure comprising:

• a semiconductor substrate;
• lower electrodes in a lower plane in and/or over the semiconductor substrate;
• and
• an upper electrode in an upper plane in and/or over the semiconductor substrate, wherein the upper plane is parallel to the lower plane, wherein the upper electrode crosses over each lower electrode and includes upper cross point regions lying directly over respective lower cross point regions in the lower electrodes, and wherein the upper electrode does not continuously extend along a single axis.