Solid-state imaging device, manufacturing method thereof, and electronic apparatus
AssigneeSony Corporation
InventorYuki Miyanami
Life of this patent
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Abstract
A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.
Claims20
An imaging device comprising:
- a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
- a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
- a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
- a wiring layer disposed adjacent to the second side of the semiconductor substrate;
- a first material disposed in the trench;
- a second material disposed in the trench;
- a silicon oxide layer disposed above the first material, the second material, and the first side of the semiconductor substrate;
- a light-shielding portion disposed above the silicon oxide layer,
- wherein the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and
- wherein the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids.
An apparatus comprising:
- an imaging device including:
- a semiconductor substrate having a first side as a light-incident side and a second side opposite to the first side;
- a plurality of photoelectric conversion portions disposed in the semiconductor substrate;
- a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions;
- a wiring layer disposed adjacent to the second side of the semiconductor substrate;
- a first material disposed in the trench;
- a second material disposed in the trench;
- a silicon oxide layer disposed above the first material, the second material, and the first side of the semiconductor substrate;
- a light-shielding portion disposed above the silicon oxide layer,
- wherein the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and
- wherein the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids;
- and
- at least one lens configured to guide light toward the light-incident side of the semiconductor substrate.
Dependencies are inferred from the claim text.