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US 10,256,256 B2Granted
Thin film transistor, a method of manufacturing the same, and a display apparatus including the same
AssigneeSamsung Display Co., Ltd.
InventorsSun Park, Chungi You, Hyuksoon Kwon
Life of this patent
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Abstract
A thin film transistor including a substrate; a semiconductor layer disposed over the substrate; a gate insulting film disposed over the semiconductor layer; and a gate electrode. The semiconductor layer includes a channel region, a source region, and a drain region. The gate insulating film includes a first region and a second region. The second region borders the first region. The gate electrode is disposed over the first region. A step shape is formed where the second region meets the first region.
Claims20
A display apparatus, comprising:
- a thin film transistor (TFT);
- a planarizing film overlapping the TFT;
- a pixel electrode disposed over the planarizing film and connected to the TFT;
- a counter electrode facing the pixel electrode;
- and
- an intermediate layer disposed between the pixel electrode and the counter electrode, wherein the TFT comprises:
- a semiconductor layer disposed over a substrate and comprising a channel region, a source region, and a drain region;
- a source electrode connected to the source region and a drain electrode connected to the drain region;
- a gate insulating film disposed over the semiconductor layer and comprising a first region and a second region, the second region disposed at sides of the first region;
- and
- a gate electrode disposed over the first region,
- wherein a thickness of the first region is different than a thickness of the second region to form a step shape, and wherein the step shape is positioned between the source electrode and the gate electrode or the step shape is positioned between the drain electrode and the gate electrode.
9 more elements
A thin film transistor, comprising:
- a substrate;
- a semiconductor layer disposed on the substrate, the semiconductor layer comprising a channel region, a source region, and a drain region;
- a gate insulating film disposed on the semiconductor layer, the gate insulating film comprising a first region and a second region, the second region bordering the first region:
- a source electrode connected to the source region and a drain electrode connected to the drain region, wherein the gate insulating film is spaced apart from the source electrode and the drain electrode;
- and
- a gate electrode disposed on the first region,
- wherein a step shape is formed where the second region meets the first region.
4 more elements
A display apparatus, comprising:
- a thin film transistor (TFT);
- a planarizing film overlapping the TFT;
- a pixel electrode disposed over the planarizing film and connected to the TFT;
- a counter electrode facing the pixel electrode;
- and
- an intermediate layer disposed between the pixel electrode and the counter electrode, wherein the TFT comprises:
- a semiconductor layer disposed over a substrate and comprising a channel region, a source region, and a drain region;
- a gate insulating film disposed over the semiconductor layer and comprising a first region and a second region, the second region disposed at sides of the first region;
- and
- a gate electrode disposed over the first region,
- wherein a thickness of the first region is different than a thickness of the second region to form a step shape, and wherein the step shape is positioned between the source region and the gate electrode or the step shape is positioned between the drain region and the gate electrode.
8 more elements
Dependencies are inferred from the claim text.