Nonvolatile memory device and method for fabricating the same

A method for fabricating a nonvolatile memory device, comprising:

• forming a stacked structure over a substrate, the stacked structure including a plurality of interlayer dielectric layers and a plurality of conductive layers that are alternately stacked;
• etching the stacked structure to such a depth to pass through at least a lowermost conductive layer by using a mask pattern as an etch barrier, wherein the mask pattern covers a first word line formation area, a second word line formation area, and a support area interposed between the first and second word, line formation areas;
• and
• removing parts of the plurality of conductive layers so that the plurality of conductive layers in the first and second word line formation areas remain while the plurality of conductive layers in the support area are remove,
• wherein the plurality of interlayer dielectric layers are further positioned at the support area corresponding to a portion between the first and second word line formation areas and serve as a support for preventing the stacked structure of the first and second word line formation areas from leaning.