Integrated structures

An integrated structure, comprising:

• a conductive line;
• a select device gate material over the conductive line and vertically spaced from the conductive line;
• conductive levels over the select device gate material;
• monolithic channel material adjacent the select device gate material and the conductive levels;
• the monolithic channel material containing a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels;
• the monolithic channel material being electrically coupled with the conductive line;
• a first region between the lower segment of the monolithic channel material and the select device gate material;
• the first region comprising a first material;
• a second region between the upper segment of the monolithic channel material and the conductive levels;
• the second region comprising a second material which is different in composition from the first material;
• and
• wherein the monolithic channel material is spaced from the conductive line by a conductive plug;
• the conductive plug directly contacting both the conductive line and the monolithic channel material;
• the conductive line comprising a first composition, and the conductive plug comprising a second composition different from said first composition.