Three-dimensional memory device with short-free source select gate contact via structure and method of making the same

A three-dimensional memory device comprising:

• a first insulating layer located over a substrate, a source select level electrically conductive layer located over the first insulating layer and an alternating stack of insulating layers and electrically conductive layers located over the substrate, wherein the electrically conductive layers comprise word line level electrically conductive layers located over the source select level electrically conductive layer;
• memory stack structures extending through the alternating stack, wherein each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film;
• a terrace region in which each electrically conductive layer other than a topmost electrically conductive layer within the alternating stack laterally extends farther than an overlying electrically conductive layer within the alternating stack;
• a retro-stepped dielectric material portion overlying the terrace region;
• support pillar structures located in the terrace region and extending through the retro-stepped dielectric material portion and the alternating stack;
• a source select level contact via structure extending though the retro-stepped dielectric material portion and contacting the source select level electrically conductive layer;
• and
• word line level contact via structures extending though the retro-stepped dielectric material portion and contacting a respective one of the word line level electrically conductive layers;
• wherein a minimum lateral separation distance between the source select level contact via structure and the support pillar structures is greater than any minimum lateral separation distance between the word line level contact via structures and the support pillar structures.